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2sc5455 NPN Transistors(BJT) 9.0V 100mA/0.1A 12Ghz 75~150 sot-143 marking R55
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 9.0V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 12Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 75~150 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage |
| 描述与应用 | NPN外延硅晶体管 4引脚微型模具 特写 •中等输出应用非常适于 •高增益，低噪声 •小反向传输电容 •可在低电压下运行 |
