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2SC5631jr NPN Transistors(BJT) 15V 80mA 11GHz 80~160 SOT-89/UPAK marking JR UHF/VHF wide band amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
6V
集电极连续输出电流IC
Collector Current(IC)
80mA
截止频率fT
Transtion Frequency(fT)
11GHz
直流电流增益hFE
DC Current Gain(hFE)
80~160
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
800mW/0.8W
Description & ApplicationsSilicon NPN Epitaxial UHF / VHF Wide Band Amplifier Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz
描述与应用NPN硅外延 UHF/ VHF宽频带放大器 特点 •高增益带宽积 FT =11 GHz的典型。 •高功率增益和低噪声系数; PG=10分贝典型。 NF=1.2 dB典型值。在f =900 MHz的
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