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2SC581300L NPN Transistors(BJT) 80V 1.5A 180MHz >200 350mV/0.35V SOT-23/SC-59 marking 5H DC-DCswitch
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC Collector Current(IC) | 1.5A |
截止频率fT Transtion Frequency(fT) | 180MHz |
直流电流增益hFE DC Current Gain(hFE) | >200 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 350mV/0.35V |
耗散功率Pc Power Dissipation | 3W |
Description & Applications | Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
描述与应用 | NPN硅外延平面型 用于DC-DC转换器 ■特点 •低集电极 - 发射极饱和电压VCE(饱和) •迷你型包装,使瘦身的设备和 通过自动插入磁带包装 |