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2SC5815 NPN Transistors(BJT) 60V 125mA/0.125A 200MHz 270~560 300mV/0.3V SOT-323/SC-70 marking ES low-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
60V
集电极连续输出电流IC
Collector Current(IC)
125mA/0.125A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsFor Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURES ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ●Low collecter to emitter saturation voltage VCE(sat)=0.3V max (@IC=30mA,IB=1.5mA) APPLICATION For hybrid IC , small type machine low frequency voltage amplify application
描述与应用低频放大应用 硅NPN外延型 说明 2SC5814,2SC5815,2SC5816,2SC5817是一个超级迷你包 NPN硅外延型晶体管。它是专为低频 电压放大应用。 特点 ●促进小型化和高密度安装 ●优良的线性的直流正向电流增益 ●捕集器发射极饱和电压低     VCE(饱和)=0.3V最大(@ IC=30毫安,IB=1.5毫安) 应用 对于混合IC,小型机低频电压放大 应用
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