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2SC5845 NPN Transistors(BJT) 60V 100mA/0.1A 100MHz 160~460 100mV/0.1V SOT-23/SC-59 marking 7M general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
160~460
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsSilicon NPN epitaxial planar type general amplification ■ Features • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
描述与应用NPN硅外延平面型  一般的放大 ■特点 •高正向电流传输比HFE •SSS迷你型封装,允许减小和变薄带包装的设备,通过自动插入
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