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2SC5846001CA NPN Transistors(BJT) 60V 100mA/0.1A 100MHz 180~390 100mV/0.1V sot-723 marking 7K general amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 180~390 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc Power Dissipation | 100mW/0.1W |
Description & Applications | Silicon NPN epitaxial planar type general amplification ■ Features • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
描述与应用 | NPN硅外延平面型 一般的放大 ■特点 •高正向电流传输比HFE •SSS迷你型封装,允许减小和变薄带包装的设备,通过自动插入 |