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2SD1005 NPN Transistors(BJT) 100V 1A 160MHz 200~400 150mV/0.15V SOT-89 marking BU radio power amplifier application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 160MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 150mV/0.15V |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | Silicon NPN epitaxial transistors description 2SD1007 is designed for audio frequency power amplifier application , especially in hybrid integrated circuits Features * high collector to emitter voltage * world standard miniature package * excellent DC current gain linearity |
| 描述与应用 | NPN硅外延晶体管 描述 2SD1007是专为音频功放中的应用， 特别是在混合集成电路 特点 *高集电极到发射极电压 *世界标准的微型封装 *卓越的DC电流增益线性 |
