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2SD1005 NPN Transistors(BJT) 100V 1A 160MHz 90~180 150mV/0.15V SOT-89 marking BW radio power amplifier application

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$0.126
≤99
$0.113
≤199
$0.094
≤499
$0.082
≤999
$0.076
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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
160MHz
直流电流增益hFE
DC Current Gain(hFE)
90~180
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
2W
Description & Applications Silicon NPN epitaxial transistors description 2SD1007 is designed for audio frequency power amplifier application , especially in hybrid integrated circuits Features * high collector to emitter voltage * world standard miniature package * excellent DC current gain linearity
描述与应用 NPN硅外延晶体管 描述 2SD1007是专为音频功放中的应用, 特别是在混合集成电路  特点 *高集电极到发射极电压 *世界标准的微型封装 *卓越的DC电流增益线性
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