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2SD1007 NPN Transistors(BJT) 120V 700mA/0.7A 90MHz 200~400 300mV/0.3V SOT-89 marking HP radio power amplifier application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
120V |
| 集电极连续输出电流IC Collector Current(IC) |
700mA/0.7A |
| 截止频率fT Transtion Frequency(fT) |
90MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
300mV/0.3V |
| 耗散功率Pc Power Dissipation |
2W |
| Description & Applications | Silicon NPN epitaxial transistors description 2SD1007 is designed for audio frequency power amplifier application , especially in hybrid integrated circuits Features * high collector to emitter voltage * world standard miniature package |
| 描述与应用 | NPN硅外延晶体管 描述 2SD1007是专为音频功放中的应用， 特别是在混合集成电路 特点 *高集电极到发射极电压 *世界标准的微型封装 |
