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2SD1030-S NPN Transistors(BJT) 50V 50mA 120MHz 600~1200 50mV SOT-23/SC-59 marking 1ZS low-frequency amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 600~1200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 50mV |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN epitaxial planer type low-frequency amplification Features * High foward current transfer ratio hFE. * Low collector to emitter saturation voltage VCE(sat) * High emitter to base voltage VEBO. * Low noise voltage NV. * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | NPN硅外延平面型 低频放大 特点 *高FOWARD电流传输比HFE。 *低集电极到发射极饱和电压VCE（SAT） *高发射器基极电压VEBO。 *低噪声电压NV。 *迷你型包装，使瘦身的设备和 通过自动插入磁带包装和杂志 包装。 |
