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2SD1484K NPN Transistors(BJT) 50V 500mA/0.5A 250MHz 180~390 400mV/0.4V SOT-23/SC-59/SMT3 marking YR medium power
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 180~390 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | medium power transistor feature * high current.(Ic=5A) *low saturation voltage. typically VCE(sat)=0.1V at Ic/Ib=150mA/15mA |
| 描述与应用 | 中等功率晶体管 特点 *高电流（IC=5A）。 *低饱和电压。通常VCE（饱和）= 0.1V |
