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2SD1619S NPN Transistors(BJT) 25V 1A 180MHz 140~280 100mV/0.1V SOT-89/PCP marking DBS
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 180MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 140~280 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor LF featrues * ultrasmall size supports high density ,ultrasmall-sized hybird ic designs |
| 描述与应用 | NPN平面外延硅晶体管 LF featrues *超小尺寸，支持高密度，超小尺寸的摄录IC设计 |
