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2SD1664 NPN Transistors(BJT) 40V 1A 150MHz 180~390 150mV/0.15V SOT-89/SC-62/MPT3 marking DAR

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
32V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & Applications Medium Power Transistor (32V, 1A) Features *Low VCE(sat), VCE(sat) = 0.15V (typical). (IC /IB = 500mA/50mA) * Complements the 2SB1132 / 2SB1237. Structure Epitaxial planar type NPN silicon transistor
描述与应用 中等功率晶体管(32V,1A) 特点 *低VCE(sat)的,VCE(饱和)=0.15V。 (IC / IB500mA/50mA) *补充 2SB1132/2SB1237。 结构 外延平面型 NPN硅晶体管
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