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2SD1819-R NPN Transistors(BJT) 30V 100mA/0.1A 150MHz 210~340 300mV/0.3V SOT-323/SC-70 marking YR general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 210~340 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | *Silicon NPN epitaxial planer type *For general amplification *Complementary to 2SB1219 and 2SB1219A Features *l Low collector to emitter saturation voltage VCE(sat) *large DC current gain hFE |
| 描述与应用 | * NPN硅外延平面型 *对于一般的放大 *互补2SB12192SB1219A 特点 * l低集电极到发射极饱和电压VCE（SAT） *大直流电流增益hFE |
