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2SD1820-R NPN Transistors(BJT) 30V 500mA/0.5A 200MHz 120~240 350mV/0.35V SOT-323/SC-70 marking WR general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
120~240
管压降VCE(sat)
Collector-Emitter Saturation Voltage
350mV/0.35V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & Applications*Silicon NPN epitaxial planer type *general amplification *Complementary to 2SB1219 and 2SB1219A Features *l Low collector to emitter saturation voltage VCE(sat)
描述与应用* NPN硅外延平面型 *一般的放大 *互补2SB12192SB1219A 特点 * l低集电极到发射极饱和电压VCE(SAT)
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