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2SD1938 NPN Transistors(BJT) 50V 300mA/0.3A 200MHz 500~1500 100mV/0.1V SOT-23/SC-59 marking 3WS low voltageoutput amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 300mA/0.3A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 800~2500 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | application Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter ■ Features • Low ON resistance Ron • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | 应用 NPN硅外延平面型 对于低电压输出放大 对于静音 用于DC-DC转换器 ■特点 •低导通电阻Ron •高正向电流传输比HFE •迷你型包装，使瘦身的设备和 通过自动插入磁带包装 |
