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2SD2115 NPN Transistors(BJT) 150V 2A >150 800mV/0.8V TO-252/DPAK marking D2115
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | >150 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 800mV/0.8V |
| 耗散功率Pc Power Dissipation | 18W |
| Description & Applications | application Low frequency power amplifier features Silicon NPN Epitaxial Planar |
| 描述与应用 | 应用 低频功率放大器 特点 硅NPN平面外延 |
