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2SD2153 NPN Transistors(BJT) 30V 2A 110MHz 820~1800 120mV/0.12V SOT-89/SC-62/MPT3 marking DNV power
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
25V |
集电极连续输出电流IC Collector Current(IC) |
2A |
截止频率fT Transtion Frequency(fT) |
110MHz |
直流电流增益hFE DC Current Gain(hFE) |
820~1800 |
管压降VCE(sat) Collector-Emitter Saturation Voltage |
120mV/0.12V |
耗散功率Pc Power Dissipation |
500mW/0.5W |
Description & Applications | Power transistor (-20V,-2A) features low saturation voltage excellent DC current gain characteristics |
描述与应用 | 功率晶体管(-20V,-2A) 功能 低饱和电压 出色的DC电流增益特性 |