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2SD2167 NPN Transistors(BJT) 31V 2A 100MHz 120~270 250mV/0.25V SOT-89/SC-62/MPT3 marking DLQ power
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
31V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
31V |
| 集电极连续输出电流IC Collector Current(IC) |
2A |
| 截止频率fT Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
120~270 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
250mV/0.25V |
| 耗散功率Pc Power Dissipation |
500mW/0.5W |
| Description & Applications | *Power Transistor *features *Built-in zener diode between collector and base. *Zener diode has low voltage dispersion. *Strong protection against reverse power surges due to low loads. PC=2 W (on 40×40×0.7mm ceramic board) |
| 描述与应用 | *功率晶体管 特点 *内置的集电极和基极之间的齐纳二极管。 *齐纳二极管具有低电压分散。 *强逆功率保护潮 低负荷。 PC=2 W（40×40×0.7毫米的陶瓷板） |
