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2SD2185-R NPN Transistors(BJT) 50V 3A 110MHz 120~240 150mV/0.15V SOT-89/SC-62 marking IHR low frequency output amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 3A |
| 截止频率fT Transtion Frequency(fT) | 110MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 150mV/0.15V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | *Silicon NPN epitaxial planer type *low-frequency output amplification *Complementary to 2SB1440 features *Low collector to emitter saturation voltage VCE(sat) *Mini Power type package, allowing downsizing of the equipment and automAtic insertion through the tape packing and the mAgazine packing |
| 描述与应用 | *NPN硅外延平面型 *低频输出放大 *互补2SB1440 特点 *低集电极到发射极饱和电压VCE（SAT） *迷你功率型封装，让瘦身的设备 *通过自动插入带包装盒包装 |
