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2SD2185-R NPN Transistors(BJT) 50V 3A 110MHz 120~240 150mV/0.15V SOT-89/SC-62 marking IHR low frequency output amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
110MHz
直流电流增益hFE
DC Current Gain(hFE)
120~240
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
1W
Description & Applications*Silicon NPN epitaxial planer type *low-frequency output amplification *Complementary to 2SB1440 features *Low collector to emitter saturation voltage VCE(sat) *Mini Power type package, allowing downsizing of the equipment and automAtic insertion through the tape packing and the mAgazine packing
描述与应用*NPN硅外延平面型 *低频输出放大 *互补2SB1440 特点 *低集电极到发射极饱和电压VCE(SAT) *迷你功率型封装,让瘦身的设备 *通过自动插入带包装盒包装
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