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2SD596 NPN Transistors(BJT) Vcbo=30V Vceo=25v Ic= 700mA/0.7A ft=170MHz HFE=200~320 Vce=220mV/0.22V SOT-23/SC-59 marking DV4
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
25V |
集电极连续输出电流IC Collector Current(IC) |
700mA/0.7A |
截止频率fT Transtion Frequency(fT) |
170MHz |
直流电流增益hFE DC Current Gain(hFE) |
200~320 |
管压降VCE(sat) Collector-Emitter Saturation Voltage |
220mV/0.22V |
耗散功率Pc Power Dissipation |
200mW/0.2W |
Description & Applications | micro package; high DC current gain,hFE:200 |
描述与应用 | 微封装; 高直流增益,HFE:200 |