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2SD602A-R NPN Transistors(BJT) 60V 500mA/0.5A 200MHz 120 ~ 240 350mV/0.35V SOT-23/SC-59 marking XR general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120 ~ 240 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 350mV/0.35V |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Features Low collector to emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | NPN硅外延平面型 对于一般的放大 互补2SB710和2SB710A 特点 低集电极到发射极饱和电压VCE（SAT） 迷你型包装，使设备和自动插入裁员通过磁带包装和杂志 包装。 |
