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2SD602A-R NPN Transistors(BJT) 60V 500mA/0.5A 200MHz 120 ~ 240 350mV/0.35V SOT-23/SC-59 marking XR general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
120 ~ 240
管压降VCE(sat)
Collector-Emitter Saturation Voltage
350mV/0.35V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsSilicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Features Low collector to emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
描述与应用NPN硅外延平面型 对于一般的放大 互补2SB710和2SB710A 特点 低集电极到发射极饱和电压VCE(SAT) 迷你型包装,使设备和自动插入裁员通过磁带包装和杂志 包装。
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