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2SD780 NPN Transistors(BJT) Vcbo=60V Vceo=60v Ic= 300mA/0.3A ft=140MHz HFE=135~220 Vce=150mV/0.15V SOT-23/SC-59 marking DW2 radiopower amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
60V |
集电极连续输出电流IC Collector Current(IC) |
300mA/0.3A |
截止频率fT Transtion Frequency(fT) |
140MHz |
直流电流增益hFE DC Current Gain(hFE) |
135~220 |
管压降VCE(sat) Collector-Emitter Saturation Voltage |
150mV/0.15V |
耗散功率Pc Power Dissipation |
200mW/0.2W |
Description & Applications | Audio Frenquency Power Amplifier NPN Silicon Transistor Mini Mold micro package; high DC current gain,hFE:200 |
描述与应用 | 音频功率放大器的频率为NPN型硅晶体管小型模具 微封装; 高直流增益,HFE:200 |