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2SD814A NPN Transistors(BJT) Vcbo=185V Vceo=185v Ic= 50mA ft=150MHz HFE=185~330 Vce=1V SOT-23/SC-59 marking LS high breakdown voltage low frequency low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
185V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
185V |
| 集电极连续输出电流IC Collector Current(IC) |
50mA |
| 截止频率fT Transtion Frequency(fT) |
150MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
185~330 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
1V |
| 耗散功率Pc Power Dissipation |
200mW/0.2W |
| Description & Applications | Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Features High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | NPN硅外延平面型 对于高击穿电压的低频和低噪声放大 特点 高集电极发射极电压VCEO。 低噪声电压NV。 通过自动插入带包装盒包装 |
