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2SJ0536 PNP transistors（BJT） -30V -100mA/-0.1A SOT-323/SC-70 marking 2C highspeed switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | ±20V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | |
| 耗散功率Pc PoWer Dissipation | 150mW/0.15W |
| Description & Applications | Silicon P-Channel MOS FET Features High-speed switching S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Low-voltage drive (Vth： −1 to 2V) Low Ron |
| 描述与应用 | 硅P沟道MOS FET 特点 高速开关 S-迷你型包装，使瘦身套和通过自动插入磁带/盒包装。 低电压驱动（VTH：-1至2V） |
