2SJ163-Q JFET P-Channel 65 V －1.0~－3.0mA SOT-23 marking 4MQ low on-resistance/low noise|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SJ163-Q JFET P-Channel 65 V －1.0~－3.0mA SOT-23 marking 4MQ low on-resistance/low noise

Model：2SJ163-Q
Mark / screen / code / typing：4MQ
Manufacturer：
Date Code：05+ 05+
Package：SOT-23/SC59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	65 V
栅源极击穿电压V(BR)GS Gate-Source Voltage	65 V
漏极电流(Vgs=0V)IDSS Drain Current	－1.0~－3.0mA
关断电压Vgs(off) Gate-Source Cut-off Voltage	1.5~3.5V
耗散功率Pd Power Dissipation	150mW/0.15W
Description & Applications	Silicon P-Channel Junction FET 2SJ163 For general switching Complementary to 2SK1103 Features Low ON-resistance Low-noise characteristics
描述与应用	硅P沟道结型场效应管 2SJ163 对于一般的切换互补2SK1103 特点低导通电阻低噪声特性

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