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2SJ204 MOSFET P-Channel -30V 200mA 6ohm SOT-23 marking H15 high-speed switch Directly driven by ICs having a 5V power supply
最大源漏极电压Vds Drain-Source Voltage |
-30V |
最大栅源极电压Vgs(±) Gate-Source Voltage |
20V |
最大漏极电流Id Drain Current |
-200mA/-0.2A |
源漏极导通电阻Rds Drain-Source On-State Resistance |
6Ω @-1A,-10V |
开启电压Vgs(th) Gate-Source Threshold Voltage |
-1.4--2.4V |
耗散功率Pd Power Dissipation |
200mW/0.2W |
Description & Applications | MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance |
描述与应用 | MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻 |