Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SJ210 MOSFET P-Channel -60V 200mA 6ohm SOT-23 marking H16 high-speed switch Directly driven by ICs having a 5V power supply
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -200mA/-0.2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 6Ω @-10mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.4--2.4V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance |
| 描述与应用 | MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻 |
