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2SJ358 MOSFET P-Channel -60V 3A 0.18ohm >89 marking UA2 power transistor low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-20V
最大漏极电流Id
Drain Current
-3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.18Ω @-1.5A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--2.0V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsFEATURES • New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages • Can be directly driven by an IC operating at 5 V. • Low on-resistance RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5A RDS(ON) = 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A
描述与应用•新型的紧凑型封装 包小信号和具有优势 功率晶体管,并弥补这些缺点 •可直接驱动IC工作在5 V。 •低导通电阻 RDS(ON)= 0.35Ω最大。 @ VGS=-4 V,ID=-1.5à RDS(ON)= 0.20Ω最大。 @ VGS=-10V,ID=-1.5à
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