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2SJ358 MOSFET P-Channel -60V 3A 0.18ohm >89 marking UA2 power transistor low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
| 最大漏极电流Id Drain Current | -3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.18Ω @-1.5A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | FEATURES • New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages • Can be directly driven by an IC operating at 5 V. • Low on-resistance RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5A RDS(ON) = 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A |
| 描述与应用 | •新型的紧凑型封装 包小信号和具有优势 功率晶体管，并弥补这些缺点 •可直接驱动IC工作在5 V。 •低导通电阻 RDS（ON）= 0.35Ω最大。 @ VGS=-4 V，ID=-1.5à RDS（ON）= 0.20Ω最大。 @ VGS=-10V，ID=-1.5à |
