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2SJ461 MOSFET P-Channel -50V 100mA/0.1A 0.31ohm SOT-23 marking H19 high-speed switch high input impedance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-50V
最大栅源极电压Vgs(±)
Gate-Source Voltage
7V
最大漏极电流Id
Drain Current
-0.1A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.31Ω @-10mA,4V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.7--1.3V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsMOS FEILD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING can be driven by a 2.5V power source not necessary to consider driving current because of its high input impedance possible to reduce the number of parts by omitting the bias resistor
描述与应用MOS场场效应晶体管 P沟道MOS场效应晶体管用于高速开关 可以由一个2.5V电源 不必考虑驱动电流,因为它的高输入阻抗 能够减少部件的数目通过省去偏置电阻
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