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2SJ484WY MOSFET P-Channel -30V 2A 0.18ohm SOT-89 marking WY high-speed switch low drive current
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.18Ω @-1A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Features • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. |
| 描述与应用 | •低导通电阻 RDS（ON）=0.18Ω（典型值）。（VGS=10V，ID=-1A） •低驱动电流 •高速开关 •4V栅极驱动装置。 |
