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2SJ511 MOSFET P-Channel -30V -2A 0.32ohm SOT-89 marking ZF high-speed switch

Price (excluding freight):
Batches(PCS):
$0.216
≤99
$0.194
≤199
$0.162
≤499
$0.140
≤999
$0.130
FCL

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.32Ω @-1A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.8--2.0V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 4V gate drive low drain-source on resistance high forward transfer admittance low leakage current enhancement mode
描述与应用东芝场效应晶体管的硅P沟道MOS型 4V栅极驱动 低漏源电阻 高正向转移导纳 低漏电流 增强模式
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