2SJ637-TL-E MOSFET P-Channel -100V -5A 0.24ohm SOT-252 marking J637 low on-resistance ultra high-speed switch 4V drive|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SJ637-TL-E MOSFET P-Channel -100V -5A 0.24ohm SOT-252 marking J637 low on-resistance ultra high-speed switch 4V drive

Model：2SJ637-TL-E
Mark / screen / code / typing：J637
Manufacturer：
Date Code：05NOPB 05NOPB
Package：TO-252/DPAK/TP-FA
Standard Package：700
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-100V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	-5A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.24Ω @-2.5A,-10V
开启电压Vgs（th） Gate-Source Threshold Voltage	-1.2--2.6V
耗散功率Pd Power Dissipation	1W
Description & Applications	Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive.
描述与应用	·低导通电阻。 ·超高速开关。 ·4V驱动器

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