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2SK1764KY MOSFET N-Channel 60V 2A SOT-89 marking KY low frequency amplifier medium/fast switch/low on-resistance/fast switch/DC-DC converting
最大源漏极电压Vds Drain-Source Voltage | 60V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 2A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.3Ω/Ohm @1A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1-2V |
耗散功率Pd Power Dissipation | 1W |
Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON A CHANNEL MOS TYPE Features Silicon N-Channel MOS FET Low frequency amplifier application High speed switching application Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter |
描述与应用 | N沟道增强型 特性 硅N沟道MOS FET 低频放大器中的应用 高速开关应用 低导通电阻 高速开关 4 V栅极驱动器可驱动5 V源 合适的开关稳压器,DC-DC转换 |