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2SK1826 MOSFET N-Channel 50V 50mA SOT-23/SC-59 marking KH fast switch/analog switch/4V gate drive/low threshold voltage
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 50mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 20Ω/Ohm @10mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON A CHANNEL MOS TYPE HIGH SPEED SWITCHING APPLICATION ANALOG SWITCHING APPLICATION Features Silicon N-Channel MOS FET High speed switching application Analog switching application 4V gate drive Low threshold voltage High speed Enhancement-mode small package |
| 描述与应用 | 东芝场效应晶体管的硅A通道MOS型 高速开关应用 模拟开关应用 特性 硅N沟道MOS FET 高速开关应用 模拟开关应用 4V栅极驱动 低阈值电压 高速 增强型 小包装 |
