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2SK1839 MOSFET N-Channel 30V 100mA/0.1A SOT-323/SC-70 marking JJ fast switch/analog switch/4V gate drive/low threshold voltage
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 15Ω/Ohm @10mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.3-1.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon Junction FETs (Small Signal) Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor N-Channel Enhancement Silicon MOSFET Analog Switch Applications Features N-Channel Enhancement Silicon MOSFET Analog Switch Applications Ultrasmall-sized package permitting 2SK1839- applied sets to be made small and slim. LargeYfs. Enhancement type. Low ON resistance. |
| 描述与应用 | 硅结场效应晶体管（小信号） 硅N沟道结型场效应管 在低频率的阻抗变换 红外传感器 N沟道增强硅MOSFET 模拟开关应用 特性 N沟道增强型硅MOSFET 模拟开关应用 超小尺寸封装允许2SK1839 应用设置作出小巧玲珑。 大Yfs。 增强型。 低导通电阻。 |
