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2SK1847-TB MOSFET N-Channel 30V 500mA/0.5A SOT-23/SC-59 marking KJ low on-resistance/high-speed switch/low-voltage drive

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Product description
最大源漏极电压Vds Drain-Source Voltage 30V
最大栅源极电压Vgs(±) Gate-Source Voltage 15V
最大漏极电流Id Drain Current 500mA/0.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 0.75Ω/Ohm @250mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage 1-2V
耗散功率Pd Power Dissipation 250mW/0.25W
Description & Applications N-CHANNEL MOS SILICON FET Very high speed switching application Features N-Channel MOS silicon FET Very high-speed switching application Low ON resistance Very high-speed switching Low-voltage drive
描述与应用 N沟道MOS硅场效应管 非常高速开关应用 特性 N沟道硅MOS FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动
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