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PMN45EN MOSFET N-Channel 30V 5.2A SOT-163/TSOP-6/SC-74 marking 45 low on-resistance/fast switch/low threshold
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 50mΩ@ VGS =4.5V, ID =2.8A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1~2V |
| 耗散功率Pd Power Dissipation | 1.75W |
| Description & Applications | Description N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology. Features Trench MOS™ technology Very fast switching Low threshold voltage Surface mount package. Applications Battery powered motor control Load switch in notebook computers High speed switch in set top box power supplies Driver FET in DC to DC converters. |
| 描述与应用 | 描述 N沟道增强型场效应晶体管在一个塑料包装使用沟槽MOS™技术。 特点 沟槽MOS™技术 开关速度非常快 低阈值电压 表面贴装封装。 应用 电池动力的电机控制 在笔记本电脑的负荷开关 高速开关机顶盒电源 在DC到DC转换器的驱动器FET。 |
