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2SK2009 MOSFET N-Channel 30V 200mA/0.2A SOT-23/SC-59 marking KM low on-resistance/fast switch/high input impedance
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.2Ω/Ohm @50mA,2.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Features Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications High input impedance Low gate threshold voltage Excellent switching times Low drain-source ON resistance Small package Enhancement-mode |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用模拟开关应用 特性 硅N沟道MOS型 高速开关应用 模拟开关应用 高输入阻抗 低Ciss栅极阈值电压 优良的开关时间 低漏源导通电阻 小型封装 增强型 |
