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2SK208-R JFET N-Channel 50v 0.3~0.75mA SOT-23 marking JR low noise0.5dB
| 最大源漏极电压Vds Drain-Source Voltage | 50v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -50v |
| 漏极电流(Vgs=0V)IDSS Drain Current | 0.3~0.75ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.4~-5v |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | •Silicon N-Channel Junction FET High Breakdown Voltage : Vgds = -50V High Input Impedance :Igss = -1.0nA(Max.) (Vgs = -30V ) Low Noise : NF=0.5dB(Typ.) (Rg=100kΩ , f=120Hz) Small Package. |
| 描述与应用 | •硅N沟道结型场效应管 高击穿电压：Vgds=-50V 高输入阻抗：IGSS=1.0nA（最大）（VGS =-30V） 低噪音：NF=0.5分贝（典型值） （RG=100KΩ，F =120Hz的） 小包装。 |
