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2SK2593JPL MOSFET N-Channel SOT-523 marking 2BP low frequency amplification/low noise gain control amplifier/high gain/high VGDO

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Product description
最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation
Description & ApplicationsSilicon Junction FETs (Small Signal) Silicon N-Channel Junction FET For low-frequency amplification For switching Features Silicon N-Channel Junction FET For low-frequency amplification For switching Low noise, high gain High gate to drain voltage VGDO Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing
描述与应用硅结场效应晶体管(小信号) 硅N沟道结型场效应管 对于开关的低频放大 特性 硅N沟道结型场效应管 用于低频放大 用于开关 低噪声,高增益 高栅漏电压VGDO 迷你型包装,让瘦身套和通过自动插入磁带/盒包装
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