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2SK2825 MOSFET N-Channel 20V 100mA/0.1A SOT-523/SSM marking KK fast switch/analog switch/high input impedance
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7Ω/Ohm @10mA,2.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1V |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type For Portable Equipment High Speed Switch Applications Analog Switch Applications Features Silicon N Channel MOS Type For Portable Equipment High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: Vth = 0.5~1.0 V Small package |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 对于便携式设备 高速开关应用 模拟开关应用 特性 硅N沟道MOS型 对于便携式设备 高速开关应用 模拟开关应用 高输入阻抗 1.5 V门驱动 低栅极阈值电压VTH =0.5〜1.0 V 小型封装 |
