2SK2910-TB-E MOSFET N-Channel 30V 800mA/0.8A SOT-23/SC-59 marking EK low on-resistance/ultra highspeed switch/4V drive|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SK2910-TB-E MOSFET N-Channel 30V 800mA/0.8A SOT-23/SC-59 marking EK low on-resistance/ultra highspeed switch/4V drive

Model：2SK2910-TB-E
Mark / screen / code / typing：EK
Manufacturer：
Date Code：05+ROHS
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	800mA/0.8A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.23Ω/Ohm @400mA,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	1-2.4V
耗散功率Pd Power Dissipation	250mW/0.25W
Description & Applications	N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Ultrahigh-Speed Switching Applications Low ON resistance Ultrahigh-speed switching 4V drive
描述与应用	N-沟道硅MOSFET 超高速开关应用特性超高速开关应用低导通电阻超高速开关 4V驱动

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