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2SK2925STR MOSFET N-Channel 60V 10A TO-252/D-PAK marking K2925 high-speed power switch/low on-resistance/4V gate driver
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 10A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.06Ω/Ohm @5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5-2.5V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | Features Silicon N Channel MOS FET High Speed Power Switching Low on-resistance RDS=0.060 Ω typ. 4V gate drive device can be driven from 5V source |
| 描述与应用 | 特性 硅N沟道MOS FET 高速电源开关 低导通电阻 RDS=0.060Ω典型。 4V栅极驱动器可以驱动自5V电源 |
