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2SK3064 MOSFET N-Channel 30V 100mA/0.1A SOT-323/SC-70 marking 2D low on-resistance/4Vdriver
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 30Ω/Ohm @10mA,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon MOS FETs (Small Signal) Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching Features Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching High-speed switching S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Low-voltage drive (Vth: −1 to 2V) Low Ron |
| 描述与应用 | 硅MOS场效应管（小信号） 硅N沟道MOS FET 对于开关的二次电池（锂离子电池等） 特性 硅N沟道MOS FET 二次电池（锂离子电池等） 用于开关 高速开关 S-迷你型包装，使瘦身套和通过自动插入磁带/盒包装。 低电压驱动（VTH：-1至2V） 低Ron |
