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2SK3084 MOSFET N-Channel 100V 30A TO-263 marking K3084 DC-DC converter/low on-resistance/4V drive
| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 30A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.046Ω/Ohm @10A，15V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.0V |
| 耗散功率Pd Power Dissipation | 65W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Features Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 40mΩ (typ.) High forward transfer admittance : |Yfs| = 27S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 100V) Enhancement−mode |
| 描述与应用 | MOS场效应晶体管 N-沟道MOS场效应晶体管的开关 特性 斩波稳压器，DC-DC转换器和电机驱动应用 4 V栅极驱动 低漏源导通电阻RDS（ON）=40MΩ（典型值） 高正向转移导纳：|YFS|=27S（典型值） 低漏电流：IDSS= 100μA（最大值）（VDS=100V） 增强型 |
