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2SK3119 MOSFET N-Channel 20V 2A SOT-89 marking KS low on-resistance/fast switch/2.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.2Ω/Ohm @1A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.3V |
| 耗散功率Pd Power Dissipation | 3.5W |
| Description & Applications | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Low ON resistance Ultrahigh-speed switching 2.5V drive |
| 描述与应用 | N-沟道硅MOSFET 超高速开关应用 特性 N-沟道硅MOSFET 超高速开关应用 低导通电阻 超高速开关 2.5V驱动 |
