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2SK3471 MOSFET N-Channel 500V 500mA/0.5A SOT-89/PW-Mini marking ZG switching regulator/DC-DC converter
| 最大源漏极电压Vds Drain-Source Voltage | 500V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 500mA/0.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 10Ω/Ohm @250mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2-4V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator and DC-DC Converter Applications Features Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型（π-MOSV） 开关稳压器和DC-DC转换器应用 特性 硅N沟道MOS型 开关稳压器和DC-DC转换器应用 低漏源导通电阻RDS（ON）=10Ω（典型值） 高正向转移导纳：| YFS| =0.4 S（典型值） 低漏电流：IDSS=100μA（最大值）（VDS=500 V） 增强模式：VTH =2.0〜4.0 V（VDS=10V，ID= 1 mA时） |
