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2SK662 JFET N-Channel 30v 2~6mA SOT-323 marking 10Q low frequency amplifier

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Product description
最大源漏极电压Vds
Drain-Source Voltage		30v
栅源极击穿电压V(BR)GS
Gate-Source Voltage		 -30v
漏极电流(Vgs=0V)IDSS
Drain Current		2~6ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage		 -0.1~-1.5v
耗散功率Pd
Power Dissipation		150mW/0.15W
Description & Applications•Silicon N-Channel Junction FET •For low-frequency amplification •High mutual conductance gm •Low noise type
描述与应用•硅N沟道结型场效应管 •对于低频放大 •高互导GM •低噪音型
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