Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SK665 MOSFET N-Channel 20V 100mA/0.1A SOT-323/SC-70 marking 30 fast switch/low driving current/high input impedance/High electrostatic breakdown voltage
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 50Ω/Ohm @20mA,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5-3.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon MOS FETs (Small Signal) Silicon N-Channel MOS FET For switching Features Silicon N-Channel MOS FET For switching High-speed switching Small drive current owing to high input inpedance High electrostatic breakdown voltage |
| 描述与应用 | 硅MOS场效应管（小信号） 硅N沟道MOS FET开关 特性 硅N沟道MOS FET 用于开关 高速开关 小的驱动电流，由于高输入阻抗方向 静电击穿电压高 |
